Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7150390 | Solid-State Electronics | 2018 | 7 Pages |
Abstract
We report on the fabrication and characterization of Resistive Random Access Memory (RRAM) devices based on nanoparticles in MIM structures. Our approach is based on the use of indium oxide (In2O3) nanoparticles embedded in a dielectric matrix using CMOS-full-compatible fabrication processes in view of back-end-off-line integration for non-volatile memory (NVM) applications. A bipolar switching behavior has been observed using current-voltage measurements (I-V) for all devices. Very high ION/IOFF ratios have been obtained up to 108. Our results provide insights for further integration of In2O3 nanoparticles-based devices for NVM applications.
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Authors
Edgar A.A. León Pérez, Pierre-Vincent Guenery, Oumaïma Abouzaid, Khaled Ayadi, Solène Brottet, Jérémy Moeyaert, Sébastien Labau, Thierry Baron, Nicholas Blanchard, Nicolas Baboux, Liviu Militaru, Abdelkader Souifi,