Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7150393 | Solid-State Electronics | 2018 | 8 Pages |
Abstract
A systematic study to model and characterize the band-modulation Z2-FET device is developed bringing light to the relevance of the carrier lifetime influence. This work provides guidelines to optimize the Z2-FETs for sharp switching, ESD protection, and 1T-DRAM applications. Lower carrier lifetime in the Z2-FET helps in attaining the sharp switch. We provide new insights into the correlation between generation/recombination, diffusion, electrostatic barriers and carrier lifetime.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Mukta Singh Parihar, Kyung Hwa Lee, Hyung Jin Park, Joris Lacord, Sébastien Martinie, Jean-Charles Barbé, Yue Xu, Hassan El Dirani, Yuan Taur, Sorin Cristoloveanu, Maryline Bawedin,