Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7150398 | Solid-State Electronics | 2018 | 6 Pages |
Abstract
A complete static and low frequency noise characterization of ultra-thin body InAs MOSFETs is presented. Characterization techniques, such as the well-known Y-function method established for Si MOSFETs, are applied in order to extract the electrical parameters and study the behavior of these research grade devices. Additionally, the Lambert-W function parameter extraction methodology valid from weak to strong inversion is also used in order to verify its applicability in these experimental level devices. Moreover, a low-frequency noise characterization of the UTB InAs MOSFETs is presented, revealing carrier trapping/detrapping in slow oxide traps and remote Coulomb scattering as origin of 1/f noise, which allowed for the extraction of the oxide trap areal density. Finally, Lorentzian-like noise is also observed in the sub-micron area devices and attributed to both Random Telegraph Noise from oxide individual traps and g-r noise from the semiconductor interface.
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Authors
T.A. Karatsori, M. Pastorek, C.G. Theodorou, A. Fadjie, N. Wichmann, L. Desplanque, X. Wallart, S. Bollaert, C.A. Dimitriadis, G. Ghibaudo,