Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7150448 | Solid-State Electronics | 2018 | 18 Pages |
Abstract
We demonstrate that N2 and O2 plasma treatment followed by rapid thermal annealing leads to surface stoichiometry modification in a AlGaN/GaN high electron mobility transistor. Both the source/drain access and gate regions respond positively improving the transistor characteristics albeit to different extents. Characterizations indicate that the surface show the characteristics of that of a higher band-gap material like AlxOy and GaxOy along with N-vacancy in the sub-surface region. The N-vacancy leads to an increased two-dimensional electron gas density. The formation of oxides lead to a reduced gate leakage current and surface passivation. The DC characteristics show increased transconductance, saturation drain current, ON/OFF current ratio, sub-threshold swing and lower ON resistance by a factor of 2.9, 2.0, 103.3, 2.3, and 2.1, respectively. The RF characteristics show an increase in unity current gain frequency by a factor of 1.7 for a 500â¯nm channel length device.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Bhanu B. Upadhyay, Kuldeep Takhar, Jaya Jha, Swaroop Ganguly, Dipankar Saha,