Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7150849 | Solid-State Electronics | 2016 | 4 Pages |
Abstract
Injection velocity (vinj) is a unique figure-of-merit that determines logic transistor ON-current (ION) and switching delay (CV/I). This paper reports on Virtual-Source (VS) based analytical and physical model, which was calibrated by using state-of-the-art experimental data on III-V and Si tri-gate n-MOSFET, aiming to compare High-Performance (HP) logic transistor performance at 7Â nm technology-node. We find that a significant increase in the virtual source injection velocity and improvement in the electrostatic integrity are critical, to meet the projected ION/IOFF ratio for the 7Â nm technology node.
Keywords
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Rock-Hyun Baek, Jin Su Kim, Do-Kywn Kim, Taewoo Kim, Dae-Hyun Kim,