Article ID Journal Published Year Pages File Type
7150849 Solid-State Electronics 2016 4 Pages PDF
Abstract
Injection velocity (vinj) is a unique figure-of-merit that determines logic transistor ON-current (ION) and switching delay (CV/I). This paper reports on Virtual-Source (VS) based analytical and physical model, which was calibrated by using state-of-the-art experimental data on III-V and Si tri-gate n-MOSFET, aiming to compare High-Performance (HP) logic transistor performance at 7 nm technology-node. We find that a significant increase in the virtual source injection velocity and improvement in the electrostatic integrity are critical, to meet the projected ION/IOFF ratio for the 7 nm technology node.
Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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