| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7151081 | Solid-State Electronics | 2012 | 5 Pages |
Abstract
⺠Electron mobility in direct contact La-silicate/Si structure is experimentally studied. ⺠The electron mobility with La-silicate differs from the SiO2 nMOSFETs. ⺠The electron mobility shows weaker Eeff dependence compared to SiO2 in middle and high Eeff. ⺠The electron mobility is monotonically reduced with decreasing EOT in entire Eeff region. ⺠Impact of EOT scaling on the mobility degradation is weaker than Hf-based oxides.
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Authors
T. Kawanago, Y. Lee, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai,