| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7151095 | Solid-State Electronics | 2012 | 6 Pages |
Abstract
⺠Stressors have different efficiency in planar nFETs and n-FinFETs. ⺠Gate-last leads to strong enhancement of CESL efficiency on planar and Fin nFETs. ⺠A gate fill can lead to 10% mobility enhancement for narrow gate-first n-FinFETs. ⺠In gate-last transistors, using a tensile gate fill degrades n-FinFET mobility.
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Authors
Geert Eneman, Nadine Collaert, Anabela Veloso, An De Keersgieter, Kristin De Meyer, Thomas Y. Hoffmann, Naoto Horiguchi, Aaron Thean,