| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7151108 | Solid-State Electronics | 2012 | 5 Pages |
Abstract
⺠Framework for accurate analysis of device by using 2D-carrier profiles from HV-SSRM into SDevice.. ⺠Accurate prediction of DIBL values for p-MOS. âºAccuracy of simulated electrical characteristics (based on the measured 2D-carrier profiles). ⺠Agreement of the DIBL-values show the validity of the SSRM 2D-profiles. ⺠These can be used for further calibration of process simulation.
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Authors
Aftab Nazir, Pierre Eyben, Trudo Clarysse, Geert Hellings, Andreas Schulze, Jay Mody, Kristin De Meyer, Hugo Bender, Wilfried Vandervorst,