CMOS without doping: Multi-gate silicon-nanowire field-effect-transistors

► Dopant-free CMOS multi-gate silicon-nanowire FET logic SOI technology. ► Device type (i.e. PMOS or NMOS) simply selected via back-gate voltage. ► Superior temperature hardness with low leakage currents. ► Freely voltage-configurable CMOS logic via back-bias selection. ► Provides additional flexibility in integrated circuit design for reconfigurable logic.