| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7151185 | Solid-State Electronics | 2012 | 8 Pages |
Abstract
⺠Advanced FinFETs are fabricated with buried storage ONO layer. ⺠FinFETs are studied for flash memory application with remote charge trapping. ⺠The Si3N4 buried layer can trap charges by applying a back-gate or drain bias. ⺠Analog, logic and multi-bit memory operations can be performed with the same cell. ⺠The separation of the storing and the sensing interfaces improves the reliability..
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Sung-Jae Chang, Maryline Bawedin, Wade Xiong, Jong-Hyun Lee, Jung-Hee Lee, Sorin Cristoloveanu,