Preparation and Photoelectric Properties of Metal-Semiconductor-Metal TiO2 Ultraviolet Detectors

Anatase TiO2 thin films were grown on quartz substrates by RF magnetron sputtering. Metal-semiconductor-metal (MSM) detectors with Ag IDT electrodes were then fabricated. The measurement of the I-V characteristics for the detectors shows good ohmic contact. Results indicate that the thickness of TiO2 layer has an obvious effect on the photoelectronic properties. When TiO2 film thickness is 197 nm, the photocurrent is nearly 2.5 orders of magnitude higher than the dark current and the photoresponse in ultraviolet region is nearly 2 orders of magnitude higher than in visible light region. The high sensitivity and visible blind properties of the obtained devices indicate their potential application as UV detectors with high efficiency and low cost.