A novel 4H-SiC MESFET with a L-gate and a partial p-type spacer

A 4H-SiC MESFET incorporated with L-gate and partial p-type spacer (LP-MESFET) is proposed and simulated. The simulations show that obvious improvements can be obtained for the LP-MESFET compared to the conventional structure (C-MESFET), such as a 17% larger of the saturation current, a 36% higher of the breakdown voltage Vb and a 95% larger of the maximum output power densities. Furthermore, the decrease of the gate-drain capacitance (CGD) will lead to an improved RF performance for the LP-MESFET.