Sharp silicon/lead zirconate titanate interfaces by electrophoretic deposition on bare silicon wafers and post-deposition sintering

Thick films of Nb-doped lead zirconate titanate (PZT) on bare silicon (Si) wafers were prepared by electrophoretic deposition (EPD) in ethanol-based suspensions. Alloyed Al/Si ohmic contacts were used for electrical connections. EPD on bare Si wafers was obtained with similar results to metallic substrates, at nominal electric fields between 4350 and 10900 V m−1. Well-adhered and crack-free green films were obtained after solvent evaporation. Sintering of green PZT films was performed at either 850 °C or 950 °C for 1 h. Sintered PZT films on Si featured sharp Si/PZT interfaces and a good degree of crystallinity. Possible applications of sintered PZT/Si structures as on-chip sensors are discussed, taking into account relevant literature results.

► Silicon/PZT stacked structures by electrophoretic deposition (EPD). ► EPD of PZT on bare silicon wafers without metallization. ► Sharp and well-adhered sintered PZT/Si interfaces were produced at 850 °C and 950 °C. ► PZT crystallinity and PZT/Si interface structure depend on sintering temperature.