| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 740842 | Sensors and Actuators B: Chemical | 2011 | 5 Pages |
The Au/SnO2/n-LTPS MOS Schottky diode prepared on a glass substrate for carbon monoxide (CO) sensing applications is studied. The n-LTPS (n-type low temperature polysilicon) is prepared by excimer laser annealing and PH3 plasma treatment of an amorphous Si thin film on glass substrate. The developed Schottky diode exhibits a high relative response ratio of ∼546% to 100 ppm CO ambient under condition of 200 °C and −3 V bias. The response ratio is better than the reported SnO2 based resistive type CO sensors of 100% and 37%, respectively on poly-alumina and glass substrates or comparable to 390% of Pt-AlGaN/GaN Schottky diode CO sensor. Thus, the Au/SnO2/n-LTPS Schottky diode has the potential to develop a low cost high performance CO sensor.
