| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 741486 | Sensors and Actuators B: Chemical | 2008 | 5 Pages |
Abstract
The electrical response of a hydrogen-sensing device is either a rectifying diode-type or a capacitor-type but could not be operated simultaneously in both the modes. However, we are able to demonstrate that a Pd/AlN/SiC device can operate in dual mode either as a rectifying diode or a capacitor. The device with a 50 nm AlN layer shows a shift of ∼0.35 V for 100 ppm H2 in both the modes, at a temperature of 150 °C. It seems that the presence of donor levels in the bandgap of the AlN layer with a wide range of energy is responsible for the observed electrical behavior of this device.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Analytical Chemistry
Authors
Md H. Rahman, Jagdish S. Thakur, Lajos Rimai, Soma Perooly, Ratna Naik, Linfeng Zhang, Gregory W. Auner, Golam Newaz,