Article ID Journal Published Year Pages File Type
742593 Sensors and Actuators B: Chemical 2012 8 Pages PDF
Abstract

Random networks of ZnO nanowires (ZnO-NWs) have been fabricated on the Si/SiO2 substrates by hydrothermal process using ZnO-nanoparticles as seed. The ZnO-NWs networks have been modified by depositing ultrathin CuO layers (nominal thickness: 10 nm) using thermal evaporation of Cu followed by oxygen annealing at 600 °C. The results of photoluminescence measurements on ZnO-NWs and CuO:ZnO-NWs networks suggest formation of a p–n junction between p-CuO and n-type ZnO. The gas sensing characteristics of both ZnO-NWs and CuO:ZnO-NWs networks have been investigated. It has been demonstrated that CuO:ZnO-NWs network has selective response toward H2S with a sensitivity of ∼40 (for 10 ppm) at an operating temperature of 200 °C. A sensing mechanism based on the destruction of p–n junctions due to the formation of metallic CuS (product of chemical reaction between CuO and H2S) has been proposed.

Related Topics
Physical Sciences and Engineering Chemistry Analytical Chemistry
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