| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 744934 | Sensors and Actuators B: Chemical | 2010 | 5 Pages |
Abstract
Biased above threshold (VT), pulsed photocurrent (u) measurements on windowed silicon Pd gate MOS capacitors are shifted (ΔV) negatively by H2/N2, whereas Au gates shift positively under NO2/air. Below VT, the shifts are reversed by adjustments of interface state population. Minor temperature increases may coax the device from inversion to depletion, inducing sign reversal of the chemical response.
Related Topics
Physical Sciences and Engineering
Chemistry
Analytical Chemistry
Authors
Rina Lombardi, Ricardo Aragón,