| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 746031 | Sensors and Actuators B: Chemical | 2007 | 4 Pages |
Abstract
A novel hydrogen sensor based on Ni/SiO2/Si MOS capacitors were fabricated and characterized at hydrogen concentrations ranging from 50 to 1000 ppm at an operating temperature of 140 °C. The highest response occurs at the same bias voltage (−0.4 V) for all the concentration levels measured and is about 18% at 50 ppm. The response/recovery transients of the Ni-based sensors are similar to those of the Pd-based hydrogen sensors. A Langmuir isotherm model is adapted to explain the observed phenomena, which is in agreement with our experimental results.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Analytical Chemistry
Authors
Chi Lu, Zhi Chen, Kozo Saito,