Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
746038 | Sensors and Actuators B: Chemical | 2007 | 4 Pages |
Abstract
Ion-sensitive field-effect transistors (ISFET) are fabricated using intrinsic hydrogen-terminated mono-crystalline diamond films. Transistor properties are realized by a surface conductive channel on hydrogen-terminated diamond. The gating is realized by immersing the diamond surface into electrolyte solution which is contacted by a platinum electrode. Hydrogen termination of diamond surface acts as a gate insulation without any additional oxide layer. The response of gate potential to pH is about −56−56 mV/pH. The results are discussed in terms of transfer doping mechanism, Nernst equation, and electrochemical properties of diamond surfaces. They are also compared with ISFETs which employ ion-sensitive gate oxides.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Analytical Chemistry
Authors
B. Rezek, D. Shin, H. Watanabe, C.E. Nebel,