Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
747533 | Solid-State Electronics | 2006 | 7 Pages |
Abstract
The effects of RF-Plasma hydrogenation and applied mechanical strain on the crystallization of silicon layers deposited on plastic substrates have been investigated where the maximum temperature remained below 170 °C for the entire process. The structural properties of the samples have been studied by optical, scanning-electron and transmission-electron microscopy where the nano-crystallinity of the silicon layers has been confirmed. The maximum average diameter of the silicon grains was 4.5 nm and occurred for an applied tensile strain of 4%. In addition, a thin-film transistor on a plastic substrate has been fabricated and found to possess an electron mobility of 2.4 cm2/V s.
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Authors
A. Behnam, F. Karbassian, S. Mohajerzadeh, A. Ebrahimi, M.D. Robertson,