| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 747548 | Solid-State Electronics | 2006 | 6 Pages |
Abstract
This paper describes the advanced DRAM and nonvolatile memory concepts, current status and challenges. Leading edge DRAM and nonvolatile memories are encountering scaling limitations such as transistor performance degradation and Vth variation. In order to overcome these constraints, three-dimensional approach is being adopted in many devices.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Fumio Horiguchi,