Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
747845 | Solid-State Electronics | 2015 | 5 Pages |
Abstract
The Hot Carrier (HC) reliability of NMOS transistors fabricated on biaxially tensile-strain SOI substrates (sSOI) is compared to that of devices fabricated on standard unstrained SOI substrates. It is shown that sSOI-based devices not only exhibit a 10% higher performance in term of ION/IOFF but also show superior HC reliability at same drive current. This reliability improvement may be explained by a better interface quality for sSOI films.
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Engineering
Electrical and Electronic Engineering
Authors
G. Besnard, X. Garros, F. Andrieu, P. Nguyen, W. Van Den Daele, P. Reynaud, W. Schwarzenbach, D. Delprat, K.K. Bourdelle, G. Reimbold, S. Cristoloveanu,