Strain effects on n-InGaAs heterostructure-on-insulator made by direct wafer bonding

We have investigated the strain effects on the effective channel mobility of InGaAs pseudo (Ψ) n-MOSFETs by means of mechanical beam bending technique. For this goal, III–V heterostructures were grown on InP and transferred onto Si by direct wafer bonding. We show that an increase in electron mobility of up to 70% can be achieved under tensile strain. Simulations of InGaAs band-structure parameters under strain suggest that in the present case mobility enhancement is due to an increase of the sheet carrier density rather than to a decrease of the effective mass.