Article ID Journal Published Year Pages File Type
747967 Solid-State Electronics 2015 4 Pages PDF
Abstract

•Proposing a novel method to determine the trap distribution in poly-Si channel MOSFETs.•Demonstrating the validity of the method using MOSFETs with various poly-Si grain sizes.•Detecting the change of trap density during hot carrier stress on poly-Si channel MOSFETs.

The trap distribution of a polysilicon (poly-Si) channel in a metal–oxide–semiconductor field effect transistor (MOSFET) was extracted successfully using a variable amplitude charge pumping method (VACP) and an energy band bending model. Compared to single crystal Si channels, the poly-Si channels exhibited a high density of bulk channel traps due to the presence of grain boundaries. The densities of the trap states existing in the poly-silicon channel with various grain sizes and channel thicknesses were extracted and compared. The grain size of poly-Si was found to have a stronger impact on the trap distribution than the channel thickness. After hot carrier stress, the trap density in the poly-silicon channel increases and the generated traps are located both at mid gap energy level and near the conduction band energy level.

Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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