Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
747983 | Solid-State Electronics | 2013 | 5 Pages |
Abstract
⺠Electrical characteristics of (1 1 0)-oriented nMOSFETs with a direct contact La-silicate/Si structure are studied. ⺠Superior interfacial properties on (1 1 0) orientation is successfully demonstrated at scaled EOT region of 0.73 nm. ⺠Superior interfacial properties on (1 1 0) orientation provide high breakdown voltage of 2.9 V. ⺠Electron mobility is reduced with decreasing EOT in (1 1 0)-oriented nMOSFETs. ⺠Influence of surface orientation on threshold voltage instability is negligibly small.
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Authors
T. Kawanago, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai,