Comparative study of electrical characteristics in (1Â 0Â 0) and (1Â 1Â 0) surface-oriented nMOSFETs with direct contact La-silicate/Si interface structure

► Electrical characteristics of (1 1 0)-oriented nMOSFETs with a direct contact La-silicate/Si structure are studied. ► Superior interfacial properties on (1 1 0) orientation is successfully demonstrated at scaled EOT region of 0.73 nm. ► Superior interfacial properties on (1 1 0) orientation provide high breakdown voltage of 2.9 V. ► Electron mobility is reduced with decreasing EOT in (1 1 0)-oriented nMOSFETs. ► Influence of surface orientation on threshold voltage instability is negligibly small.