| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 748216 | Solid-State Electronics | 2008 | 4 Pages |
Abstract
A novel super junction LDMOS (SJ-LDMOS) structure, which reduces substrate-assisted depletion effect, is proposed. The proposed device uses a non-uniform N-buried layer implemented between the SJ region and P substrate to achieve a uniform distribution of surface electric field. Numerical simulation results indicate that the proposed device features high breakdown voltage, low on-resistance. In addition, the proposed device is compatible with smart power technology.
Keywords
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Wanjun Chen, Bo Zhang, Zhaoji Li,