| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 748511 | Solid-State Electronics | 2011 | 5 Pages |
Abstract
Ag/ZnO/Ag thin films representing metal/semiconductor/metal ultraviolet (UV) photodetectors were successfully prepared by RF magnetron sputtering. A UV light emitting diode was used as an illuminating source at 365 nm. The current–voltage characteristics of the device under UV illumination showed an enhancement in the forward current. Device modeling was carried out using impedance spectroscopy. The resistance of the device decreased as the light was switched from dark to UV. Moreover, the device showed further decrease in resistance at a bias voltage of up to 2 V.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
N.H. Al-Hardan, M.J. Abdullah, H. Ahmad, A. Abdul Aziz, L.Y. Low,