Formulas of 1/f noise in Schottky barrier diodes under reverse bias

This paper presents the formulas of 1/f noise in Schottky barrier diodes under reverse bias condition. The derived formulas show that the electron density near the metal–semiconductor interface plays an important role in determining the power spectral density of 1/f noise current in Schottky diodes under reverse bias. The formulas give information on how to calculate the low-frequency noise in metal–semiconductor (or oxide)–metal devices such as resistive switching devices or memristors which have structures of two back-to-back Schottky barrier diodes as well as in the reverse-biased Schottky diodes.The formulas show that the power spectral density of the flicker noise in reverse-biased Schottky barrier diodes increases proportional to the square of the dc current in thermionic emission-limited condition.

► We model the formulas of 1/f noise in Schottky barrier diodes under reverse bias. ► Electron density is derived to calculate 1/f noise in Schottky barrier. ► Electron density plays a crucial role in determining the 1/f noise level. ► Power spectral density of 1/f noise is proportional to the square of dc current. ► A good agreement between experimental data and theoretical results is shown.