| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 748922 | Solid-State Electronics | 2011 | 4 Pages |
Abstract
A simple analytical threshold voltage model for lightly doped tri-gate MOSFETs has been developed, using the superposition of the threshold voltages of a symmetric and an asymmetric double-gate MOSFET. The model has been verified by comparison with experimental and simulation results of tri-gate FinFETs with various fin widths and channel lengths. Excellent agreement between model, experimental and simulation results is obtained, demonstrating the validity of the proposed threshold voltage model.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
A. Tsormpatzoglou, D.H. Tassis, C.A. Dimitriadis, G. Ghibaudo, N. Collaert, G. Pananakakis,