Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
749734 | Solid-State Electronics | 2006 | 4 Pages |
Abstract
A vertical metal-oxide-semiconductor field-effect transistor with the novel feature of a dielectric pocket between the channel and source/drain has been fabricated and tested. These dielectric pocket vertical MOSFETs (DPV-MOSFETs) show an improved suppression of short-channel effects such as VT roll-off and drain induced barrier lowering (DIBL). This is due to reduced charge sharing, thus allowing better threshold voltage control. The dielectric pocket also prevents dopant diffusion from the source/drains into the body during device fabrication, mitigating bulk punchthrough.
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Authors
S.K. Jayanarayanan, S. Dey, J.P. Donnelly, S.K. Banerjee,