Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
753205 | Solid-State Electronics | 2010 | 6 Pages |
Abstract
The asymmetric characteristics of the conventional vertical MOSFET are examined. To reduce the IR drop influences of the diffusion resistance for the vertical MOSFET, a new vertical MOSFET for the Vertical Logic Circuit (VLC) configuration, which separates the current paths of small currents from large currents, has been proposed.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Koji Sakui, Tetsuo Endoh,