Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
753445 | Solid-State Electronics | 2008 | 5 Pages |
Abstract
Thin-film inverters based on high mobility microcrystalline silicon thin-film transistors (TFTs) with different channel lengths were realized. The NMOS enhancement load saturation mode (NELS) inverters were prepared by plasma-enhanced chemical vapor deposition at temperatures below 200 °C. The realization of microcrystalline silicon thin-film inverters facilitates the direct integration of column and row drivers and circuitry on display backpanels. The influence of the transistor properties and underlying contact effects on the performance of the inverters will be discussed.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Kah-Yoong Chan, Eerke Bunte, Dietmar Knipp, Helmut Stiebig,