Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
753598 | Solid-State Electronics | 2006 | 6 Pages |
Abstract
Practical application of integrated circuits requires operation over a wide temperature range. In the case of microwave monolithic integrated circuits (MMICs), the quality of the interconnections as well as the passive matching networks in term of losses is predominent. Therefore, there is a need to investigate the performances of transmission line structures on Si-based substrates in a wide temperature range, as a function of frequency. The behaviour of 50 Ω thin film microstrip (TFMS) and coplanar waveguide (CPW) transmission line topologies on both standard and high resistivity silicon-on-insulator (SOI) substrates versus high temperature is presented.
Keywords
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
M. Si Moussa, C. Pavageau, D. Lederer, L. Picheta, F. Danneville, N. Fel, J. Russat, J.-P. Raskin, D. Vanhoenacker-Janvier,