| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 758159 | Communications in Nonlinear Science and Numerical Simulation | 2015 | 5 Pages |
Abstract
•Conservation laws and solutions of drift–diffusion model for quantum semiconductors.•Construction is based on the method of nonlinear self-adjointness.•Exact solutions are obtained using the recent method of conservation laws.•These solutions are different from group invariant solutions.
In the present paper a quantum drift–diffusion model describing semi-conductor devices is considered. New conservation laws for the model are computed and used to construct exact solutions.
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Authors
N.H. Ibragimov, R. Khamitova, E.D. Avdonina, L.R. Galiakberova,