Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
758750 | Communications in Nonlinear Science and Numerical Simulation | 2011 | 12 Pages |
Abstract
This paper describes the application of a recently developed analytic approach known as the homotopy analysis method to derive an approximate solution to the nonlinear Poisson–Boltzmann equation for semiconductor devices. Specifically, this paper presents an analytic solution to potential distribution in a DG-MOSFET (Double Gate-Metal Oxide Semiconductor Field Effect Transistor). The DG-MOSFET represents one of the most advanced device structures in semiconductor technology and is a primary focus of modeling efforts in the semiconductor industry.
Keywords
Related Topics
Physical Sciences and Engineering
Engineering
Mechanical Engineering
Authors
Christopher J. Nassar, Joseph F. Revelli, Robert J. Bowman,