| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7718748 | International Journal of Hydrogen Energy | 2014 | 5 Pages |
Abstract
In this work, we have studied solar cells based on AlGaInAs/InP quaternary structure to describe the behavior of electronics components. To this end, we have developed a simulation program to study the gallium Ga and aluminum Al concentrations effect on respectively the lattice mismatch, the band gap energy, the absorption and the power delivered by the solar cell. This study allows us to compare between simulation and experimental results, once the cell parameters are optimized by a judicious choice of concentrations. This work allows us either to use nanotechnologies for solar cells.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Electrochemistry
Authors
A. Aissat, M. El bey, R. Bestam, J.P. Vilcot,