| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7719416 | International Journal of Hydrogen Energy | 2014 | 5 Pages |
Abstract
Structural characterization of nanocrystalline Al-doped ZnTe semiconductors, obtained by mechanical milling from ZnTe and Al2O3 powders, is presented. The samples were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray absorption full spectroscopy (XAFS) and positron annihilation lifetime (PALS) measurements. The results suggested that Al atoms are substitutional incorporated into the ZnTe cubic structure.
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Authors
J.I. Laborde, J. Hoya, M.D. Reyes Tolosa, M.A. Hernandez-Fenollosa, L.C. Damonte,