| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7723802 | International Journal of Hydrogen Energy | 2012 | 12 Pages |
Abstract
⺠High temperature diffusion affects structural stability of SOEC materials and interfaces. ⺠La and Sr substitutional defects significantly increase pressure buildup at interfaces. ⺠This pressure causes oxygen delamination in SOEC devices. ⺠Simple atomic-scale models for estimating these effects are developed. ⺠Possibilities for inhibiting delamination are indicated
Related Topics
Physical Sciences and Engineering
Chemistry
Electrochemistry
Authors
Sergey N. Rashkeev, Michael V. Glazoff,