| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7747366 | Solid State Ionics | 2012 | 8 Pages |
Abstract
⺠Low T dielectric properties of Ce0.8Gd0.2O1.9 films with/out substrate were measured. ⺠The grain boundary conductivity of both types of films freezes out below 150 K. ⺠Below 150 K, the effective dielectric constant of both types of films is 20.5±2.5. ⺠The dielectric constant of self-supported films is weakly unstable between 80-140 K. ⺠Defect ordering may cause the unstable dielectric constant of self-supported films.
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Physical Sciences and Engineering
Chemistry
Electrochemistry
Authors
Victor Shelukhin, Ilya Zon, Ellen Wachtel, Yishay Feldman, Igor Lubomirsky,