Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7867860 | Materials Science and Engineering: C | 2016 | 9 Pages |
Abstract
The paper is focused on elaboration of ZrO2 films on pure zirconium via anodizing in phosphoric acid with and without fluoride at constant potentials of 30Â V and 60Â V. The structure and composition of the films were investigated using scanning electronic microscopy, Raman spectroscopy and X-ray photoelectron spectroscopy. The composition of the oxides formed at both potentials can be identified as monoclinic ZrO2. In addition to Zr and O, the layers formed in phosphoric acid contain phosphorus originating from the phosphoric acid. When the phosphoric acid solution contains NaF, fluorine is also incorporated into the oxide layer. The oxides formed at a higher voltage have greater roughness than those formed at 30Â V. Anodized samples exhibit smaller current densities during anodic polarization compared to the as-received zirconium covered with native oxide.
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Authors
Daniela E. Romonti, Andrea V. Gomez Sanchez, Ingrid MiloÅ¡ev, Ioana Demetrescu, Silvia Ceré,