Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7899568 | Journal of Non-Crystalline Solids | 2018 | 9 Pages |
Abstract
Electrical properties of the InAlN films were studied using Van Der Pauw technique and Hall Effect parameters. The volumetric carrier concentration decreases when InN fraction mole increases. The mobility values range between 6â¯Ãâ¯10â2 and 5â¯Ãâ¯10â1â¯cm2â¯Vâ1â¯sâ1, which are lower than those obtained for crystalline and polycrystalline samples. The obtained band gap values could be used in both the absorbing layer and the window layer in solar cells (1.9â¯eV-2.3â¯eV). Interestingly, this figures of Eg are very close to the previously obtained values for polycrystalline samples. The optical absorption coefficients were high compared to the materials currently used in solar cells (~105â¯cmâ1). This implies the possibility of using thinner layers in photovoltaic devices based on InxAl1-xN.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
L.F. Mulcué Nieto, W. Saldarriaga, W. de la Cruz, E. Restrepo, Carlos Daniel Acosta-Medina, N. Sanchez, S. Mendoza, N. Duarte, Llanos Mora-López,