Intra-center and recombination luminescence of bismuth defects in fused and unfused amorphous silica fabricated by SPCVD

► Bi-doped silica (SPCVD) deposited films expose photoluminescence bands at 650 nm and 1400 nm. ► 650 nm band could be excited intra-center with 532 nm laser and in recombination process under 248 and 193 nm lasers. ► Defect responsible for 1400 nm band does not participate in recombination processes.