| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7904083 | Journal of Non-Crystalline Solids | 2013 | 6 Pages |
Abstract
⺠GaAs films with high dose of Ti incorporated have been obtained by R.F. sputtering. ⺠The evolution of Ga molar fraction suggests a possible substitution of Ga by Ti. ⺠XRD measurements reveal the presence of a new phase structure. ⺠The XPS measurement only reveals Tiδ + species. ⺠The presence of Ti affects the Etauc trend depending on the deposition conditions.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
A. Boronat, S. Silvestre, L. Castañer,