The nc-Si films with controlled crystal structure and electrical conductivity via the re-crystallization approach

Article ID	Journal	Published Year	Pages	File Type
7904107	Journal of Non-Crystalline Solids	2013	6 Pages	PDF

Abstract

âº The nc-Si films with controlled microstructure and electrical conductivity (Ï) âº The crystal size was controlled at ~Â 5Â nm at the controlled process condition. âº Logarithm of Ï is linearly proportional to the crystallized fraction under the circumstance above. âº RTP enhanced the recrystallization and conductivity of the Si films.

Keywords

Re-crystallization Electrical conductivity Rapid thermal process Crystalline volume fraction

Related Topics

Physical Sciences and Engineering Materials Science Ceramics and Composites

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The nc-Si films with controlled crystal structure and electrical conductivity via the re-crystallization approach

Authors

Fei Yang, Xiang Li, Zhaohui Ren, Gang Xu, Yong Liu, Ge Shen, Gaorong Han,