| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7930371 | Optics Communications | 2015 | 7 Pages |
Abstract
The equivalent electrical circuits - including the parasitic elements and their variations with the injected bias current - for three semiconductor optical amplifiers (SOA) were obtained. Frequency domain measurements with further tuning of numerical modeling parameters were used to extract circuit parameters. Characterization of chip-on-carrier and encapsulated devices agree with numerical data up to 20Â GHz. The results are relevant for designing fast speed, SOA-gated switches in optical routers.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Rafael C. Figueiredo, Napoleão S. Ribeiro, Cristiano M. Gallep, Evandro Conforti,