Performance analysis of gate all around GaAsP/AlGaSb CP-TFET

Illustration of importance of gate all around (GAA) structure and hetero-junction formed by III-V semiconductor compounds has been analysed through GaAsP/AlGaSb CP-TFET (charge plasma tunnel field effect transistor). Charge plasma concept has been incorporated here to make this device more immune towards random dopant fluctuations (RDF). A high driving current of 1.28×10−5 A/μm and transconductance (gm) of 96.4  μS at supply voltages VGS = 1V and VDS = 0.5V is achieved. Further, implications of employing this device in analog/RF circuits have been supported with simulated results showing a high cut-off frequency of 34.5 THz and device efficiency of 3.45 MV−1. Apart from this, an insight of the linearity performances has also been included. Simultaneously, all the results are compared with a conventional gate all around charge plasma TFET.