| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7939956 | Superlattices and Microstructures | 2017 | 6 Pages |
Abstract
In this paper, the radio frequency and analog performance of two tunnel field-effect transistors with symmetric structures are analyzed. The symmetric U-shape gate tunnel field-effect transistor (SUTFET) and symmetric tunnel field-effect transistor (STFET) are investigated by Silvaco Atlas simulation. The basic electrical properties and the parameters related to frequency and analog characteristics are analyzed. Due to the lower off-state leakage current, the STFET has better power consumption performance. The SUTFET obtains larger operating current (242 μA/μm), transconductance (490 μS/μm), output conductance (494 μS/μm), gain bandwidth product (3.2 GHz) and cut-off frequency (27.7 GHz). The simulation result of these two devices can be used as a guideline for their analog/RF applications.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Shupeng Chen, Hongxia Liu, Shulong Wang, Wei Li, Qianqiong Wang,