Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7940692 | Superlattices and Microstructures | 2017 | 11 Pages |
Abstract
In this paper, the effect of fringe induced barrier lowering (FIBL) in-conjunction with channel parameters that includes channel thickness (TSi), channel length (Lg) and lateral straggle (ÏL) on analog and RF performance of FinFET, have been studied using TCAD mixed-mode Sentaurus device simulator. We focused on the variation in analog (intrinsic dc gain) and RF (cut-off frequency) figure of merit (FOM) of high-K gate dielectric based FinFET with respect to channel parameters. It is observed that the variation in intrinsic dc gain (ÎAV) aggravates with TSi scaling. We also observe a mixed response to the ÎAV with respect to variation in Lg and ÏL, where ÎAV follows an inverse parabolic behavior peaking at an intermediate value of Lg and ÏL. Variation in cut-off frequency (ÎfT) on the other hand, is negligible (slightly increases with TSi and decreases with Lg and ÏL). These properties of channel parameters can be handy in designing of high-K gate dielectric based FinFET for analog circuits.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Shubham Tayal, Ashutosh Nandi,