Symmetrical SOI MESFET with a dual cavity region (DCR-SOI MESFET) to promote high-voltage and radio-frequency performances

A novel symmetrical SOI-MESFET is reported to enhance high-voltage and radio-frequency performances, successfully. Two p-type cavity regions with certain features are embedded in the proposed structure to control the channel region. The cavity regions absorb the channel potential lines resulting in an evener potential profile throughout the channel region. Hence, the critical electric field at the end of gate edge near the drain will be considerably reduced thus increasing the breakdown voltage, finally. A comprehensive comparison in terms of breakdown voltage, radio-frequency parameters, drain-source conductance and minimum noise figure shows that the reported new device reaches a superior electrical performance when compared with a conventional SOI MESFET.