Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7942144 | Superlattices and Microstructures | 2015 | 29 Pages |
Abstract
This paper presents charge based analytical drain current and capacitance model of material engineered Cylindrical/Surrounded Gate (CGT/SGT) MOSFET with nanogap cavity region for sensor applications. Material engineered i.e. dual material gate provides improvement in Short Channel Effects (SCEs) and cylindrical shape nanogap cavity region is used for sensing of biomolecule strength. The material engineered CGT/SGT MOSFET sensor electrically detect the targeted biomolecules of different strength by change in drain current and gate capacitance. Analysis has been carried out by using unified charge control based model derived from Poisson's equation. It is shown that sensitivity of changing biomolecules strength is more in gate capacitance than the drain current. The results so obtained are in good agreement with the 3D simulated data which validate the model.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Jay Hind Kumar Verma, Yogesh Pratap, Subhasis Haldar, R.S. Gupta, Mridula Gupta,